Mapping the Uniformity of Deep Level Defects Distribution by Scanning Photoluminescence

Chin. Phys. Lett.

1991, Vol. 8

Issue (7): 380-383 DOI:

Original Articles

Mapping the Uniformity of Deep Level Defects Distribution by Scanning Photoluminescence

WENG Yumin;LIN Song;ZONG Xiangfu

Institute of Materials Science, Fudan University, Shanghai 200433

Cite this article:

WENG Yumin, LIN Song, ZONG Xiangfu 1991 Chin. Phys. Lett. 8 380-383

Download: PDF(208KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract Deep level defects in undoped semi-insulating GaAs were investigated by photo-luminescence technique at room temperature. The 0.69eV band is associated with the main mid-gap level EL2, and the 0.76eV band is suggested to be caused by some native point defects related to excess As, such as As anti-site defect. Two-dimensional and pseudo three-dimensional plots of the EL2 related band have been observed for as grown and annealed wafers.

Keywords: 78.55.Cr 71.55.Eq

Published: 01 July 1991

PACS:	78.55.Cr	(III-V semiconductors)
	71.55.Eq	(III-V semiconductors)

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1991/V8/I7/0380

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	WENG Yumin
	LIN Song
	ZONG Xiangfu

Related articles from Frontiers Journals

[1]	XU Sheng-Rui, LIN Zhi-Yu, XUE Xiao-Yong, LIU Zi-Yang, MA Jun-Cai, JIANG Teng, MAO Wei, WANG Dang-Hui, ZHANG Jin-Cheng, HAO Yue. Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a−Plane and Semipolar (11[J]. Chin. Phys. Lett., 2012, 29(1): 380-383**
[2]	SONG Shi-Wei, LIANG Hong-Wei, LIU Yang, XIA Xiao-Chuan, SHEN Ren-Sheng, LUO Ying-Min, DU Guo-Tong,. A Study of GaN Grown on SiH₄ Pre-Treated 6H-SiC Substrates**[J]. Chin. Phys. Lett., 2012, 29(1): 380-383
[3]	JI Chang-Jian, ZHANG Cheng-Qiang, ZHAO Gang, WANG Wen-Jing, SUN Gang, YUAN Hui-Min, HAN Qi-Feng . Preparation and Properties of Diluted Magnetic Semiconductors GaMnAs by Low-Temperature Molecular Epitaxy**[J]. Chin. Phys. Lett., 2011, 28(9): 380-383
[4]	DAI Ke-Hui, , WANG Lian-Shan, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 380-383
[5]	XIE Zi-Li, ZHANG Rong, LIU Bin, XIU Xiang-Qian, SU Hui, LI Yi, HUA Xue-Mei, ZHAO Hong, CHEN Peng, HAN Ping, SHI Yi, ZHENG You-Dou . Growth and Properties of Blue and Amber Complex Light Emitting InGaN/GaN Multi-Quantum Wells**[J]. Chin. Phys. Lett., 2011, 28(8): 380-383
[6]	U. Yesilgul, F. Ungan, E. Kasapoglu, H. Sari, I. Sö, kmen . Effects of an Intense Laser Field and Hydrostatic Pressure on the Intersubband Transitions and Binding Energy of Shallow Donor Impurities in a Quantum Well**[J]. Chin. Phys. Lett., 2011, 28(7): 380-383
[7]	SUI Yan-Ping, YU Guang-Hui . Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy**[J]. Chin. Phys. Lett., 2011, 28(6): 380-383
[8]	WANG Yong, , YU Nai-Sen, LI Ming, LAU Kei-May . Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD**[J]. Chin. Phys. Lett., 2011, 28(5): 380-383
[9]	WANG Lai, ZHAO Wei, HAO Zhi-Biao, LUO Yi . Photocatalysis of InGaN Nanodots Responsive to Visible Light**[J]. Chin. Phys. Lett., 2011, 28(5): 380-383
[10]	LIU Zhan-Hui, XIU Xiang-Qian, YAN Huai-Yue, ZHANG Rong, XIE Zi-Li, HAN Ping, SHI Yi, ZHENG You-Dou . Gallium Nitride Nanowires Grown by Hydride Vapor Phase Epitaxy**[J]. Chin. Phys. Lett., 2011, 28(5): 380-383
[11]	SHI Feng, , ZHANG Yi-Jun, CHENG Hong-Chang, ZHAO Jing, XIONG Ya-Juan, CHANG Ben-Kang . Theoretical Revision and Experimental Comparison of Quantum Yield for Transmission-Mode GaAlAs/GaAs Photocathodes**[J]. Chin. Phys. Lett., 2011, 28(4): 380-383
[12]	HOU Qi-Feng, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, YANG Cui-Bai, YIN Hai-Bo, LI Jin-Min, WANG Zhan-Guo . Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN**[J]. Chin. Phys. Lett., 2011, 28(3): 380-383
[13]	LV Wen-Bin, WANG Lai, WANG Jia-Xing, HAO Zhi-Biao, LUO Yi . Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers**[J]. Chin. Phys. Lett., 2011, 28(12): 380-383
[14]	ZHOU Xiao-Hao, CHEN Ping-Ping, CHEN Xiao-Shuang, LU Wei . Temperature-Dependent Optical Properties of InAs/GaAs Self-Assembled Quantum Dots: Spectroscopic Measurements and an Eight-Band Study**[J]. Chin. Phys. Lett., 2011, 28(11): 380-383
[15]	HOU Qi-Feng, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, YANG Cui-Bai, LI Jin-Min. Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN[J]. Chin. Phys. Lett., 2010, 27(5): 380-383

Viewed

Full text

Abstract