STUDY OF NEUTRON IRRADIATED a-Si:H

Chin. Phys. Lett.

1990, Vol. 7

Issue (9): 418-420 DOI:

Original Articles

STUDY OF NEUTRON IRRADIATED a-Si:H

WANG Shulin;CHENG Ruguang;QI Mingwei¹;TANG Wenguo²;SHEN Xuechu²;GAO Jijin³

Shanghai Institute of Ceramics, Academia Sinica, Shanghai 200050 ¹Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050 ²Infrared Laboratory, Shanghai Institute of Technical Physics Academia Sinica, Shanghai 200083 ³Institute of Atomic Energy, Beijing 102413

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WANG Shulin, CHENG Ruguang, QI Mingwei et al 1990 Chin. Phys. Lett. 7 418-420

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Abstract Neutron transmutation doping (NTD) effect in hydrogenated amorphous silicon (a-Si:H) has been reexamined. There is no increase of both dark and photoconductivity of neutron irradiated a-Si:H after annealing at 180°C or 240°C . Our experimental results support Burnett et al. who contradict the finding that NTD in a-Si:H is effective by Hamanaka et al.

Keywords: 61.80.Hg 81.15.Gh 81.60.Cp 72.80.-r

Published: 01 September 1990

PACS:	61.80.Hg	(Neutron radiation effects)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.60.Cp
	72.80.-r	(Conductivity of specific materials)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1990/V7/I9/0418

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	WANG Shulin
	CHENG Ruguang
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	GAO Jijin

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