SELF- AND IMPURITY-DIFFUSION MECHANISMS IN UNDOPED AND MODULATION-DOPED (GaA1)As SUPERLATTICES

Chin. Phys. Lett.

1990, Vol. 7

Issue (11): 506-509 DOI:

Original Articles

SELF- AND IMPURITY-DIFFUSION MECHANISMS IN UNDOPED AND MODULATION-DOPED (GaA1)As SUPERLATTICES

WANG Enge

International Centre for Materials Physics, Academia Sinica, Shenyang 110015 and Department of Physics, Peking University, Beijing 100871

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WANG Enge 1990 Chin. Phys. Lett. 7 506-509

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Abstract The charged states of antisites and interstitials in undoped and n- or p-type Si modulation-doped ( GaAl ) As superlattices have been determined by the calculated electronic structures wing recursion method within tight-binding formalism. Based on the behavior of these point defects, some new mechanisms that describe the self-diffusion and impurity diffusion processes are suggested and discussed.

Keywords: 66.30.-h 73.20.Hb 73.20.Dx

Published: 01 November 1990

PACS:	66.30.-h	(Diffusion in solids)
	73.20.Hb	(Impurity and defect levels; energy states of adsorbed species)
	73.20.Dx

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1990/V7/I11/0506

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