ROLE OF ALTER LAYER IN DEPTH PROFILE OF INTERFACE

Chin. Phys. Lett.

1989, Vol. 6

Issue (5): 209-212 DOI:

Original Articles

ROLE OF ALTER LAYER IN DEPTH PROFILE OF INTERFACE

ZHANG Qiangji;LU Ming;FEI Lu

Institute of Modern Physics, Fudan University, Shanghai

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ZHANG Qiangji, LU Ming, FEI Lu 1989 Chin. Phys. Lett. 6 209-212

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Abstract A new model based on the alter layer induced by ion bombardment has been proposed, which can explain the depth profile of interface of Ta₂O₅/Ta quite well. In contradiction with the generally accepted point of view the depth profile does not follow the shape of the error function. The dcminant factor for resolution is the thickness of the alter layer (δ) rather than the electron mean free path (λ). The Ta₂O₅/Ta sample was prepared by the method of anodic oxidation with thickness of 500Å. All the surface analyses were performed by using scanning Auger micro probe (model PHI-590) at room temperature.

Keywords: 6180J 7920N

Published: 01 May 1989

PACS:	6180J
	7920N
	6800

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1989/V6/I5/0209

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	ZHANG Qiangji
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	FEI Lu

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