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PHOTOINDUCED DEFECT OPTICAL ABSORPTION IN a-Si:H |
| WU Lei;HAN Daxing |
| Institute of Physics, Academina Sinica, Beijing |
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| Cite this article: |
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WU Lei, HAN Daxing 1989 Chin. Phys. Lett. 6 181-184 |
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Abstract The photoinduced defect absorption in a-Si:H excited by bandgap light was studied. Energy position of light-induced metastable defects is different from that of native dangling bonds.
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| Keywords:
72.80Ng
72.20Jv
71 .25Mg
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Published: 01 April 1989
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