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NN PAIR EMISSION IN GaAs0.15P0.85: N UNDER HYDROSTATIC PRESSURE |
ZHANG Yong;YU Qi;ZHENG Jiansheng;YAN Bingzhang;WU Boxi;LI Guohua;WANG Zhaoping;HAN Hexiang |
Department of Physics, Xiamen University, Xiamen
Institute of Semiconductors Academia Sinica, Beijing |
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Cite this article: |
ZHANG Yong, YU Qi, ZHENG Jiansheng et al 1988 Chin. Phys. Lett. 5 353-356 |
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Abstract The photoluminescence of GaAs0.15P0.85: N has been studied at 77K under hydrostatic pressure. The NN1 emission is clearly observed when P>l0kbar. This result indicates that pressure enhances the thermally assisted Nx→NN1 exciton transfer. The pressure behaviors of Nx and NN1 levels are analysed.
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Published: 01 August 1988
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