Chin. Phys. Lett.  1988, Vol. 5 Issue (8): 353-356    DOI:
Original Articles |
NN PAIR EMISSION IN GaAs0.15P0.85: N UNDER HYDROSTATIC PRESSURE
ZHANG Yong;YU Qi;ZHENG Jiansheng;YAN Bingzhang;WU Boxi;LI Guohua;WANG Zhaoping;HAN Hexiang
Department of Physics, Xiamen University, Xiamen Institute of Semiconductors Academia Sinica, Beijing
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ZHANG Yong, YU Qi, ZHENG Jiansheng et al  1988 Chin. Phys. Lett. 5 353-356
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Abstract The photoluminescence of GaAs0.15P0.85: N has been studied at 77K under hydrostatic pressure. The NN1 emission is clearly observed when P>l0kbar. This result indicates that pressure enhances the thermally assisted Nx→NN1 exciton transfer. The pressure behaviors of Nx and NN1 levels are analysed.
Published: 01 August 1988
PACS:  7855  
  6250  
  7135  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1988/V5/I8/0353
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ZHANG Yong
YU Qi
ZHENG Jiansheng
YAN Bingzhang
WU Boxi
LI Guohua
WANG Zhaoping
HAN Hexiang
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