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RESONANT BEHAVIOUR OF GaAs LO PHONONS IN A GaAs-A1As SUPERLATTICE |
| ZHANG Shulin1;T.A. Gant2;M.Delaney2;M.V. Klein2＊;J.Klem3;H-Morkoc3 |
| 1Department of Physics, Peking University, Beijing
2Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
3Department of Electrical Engineering and coordinated Science
Lab., University of " 1llinois at Urbana-Champaign, Urbana, IL
61801, USA)
＊Also at Coordinated Science Lab., UIUC.
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| Cite this article: |
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ZHANG Shulin, T.A. Gant, M.Delaney et al 1988 Chin. Phys. Lett. 5 113-116 |
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Abstract Resonant Raman scattering from GaAs LO phonons in a 59Å GaAS/20Å AlAs superlattice was studied. The relevant intersubband energies were determined. The results suggest that all of the exciton transitions from the hole subbands HH1, LH1, HH2, HH3, LH2 and HH4 to the electron subbands CB1 and CB2 in the energy region covered by our incident dye laser were observed and a justificative analysis may involve effects due to valence band mixing and to 3D electronic miniband structure.
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Published: 01 March 1988
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