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THE STUDY ON GETTERING MECHANISM OF DOUBLE-GETTERING TECHNIQUE |
| MA1 Zhenhong*;DAI Daoyang*,ZHOU Shiren;YE Yizheng;YE Shuichi |
| *Institute of Physics, Academia Sinica, Beijing
Harbin Institute of Technology, Harbin |
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| Cite this article: |
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MA Zhenhong, DAI Daoyang, ZHOU Shiren et al 1987 Chin. Phys. Lett. 4 293-296 |
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Abstract The applications of double-gettering technique (DGT) for silicon single crystal indicate its strong gettering effectiveness. By using E-center model, the minimum concentration of phosphorus, gettering process and the continuous gettering ability were investigated. It was pointed out that the gettering functions of phosphorus and dislocation loops result in extremely strong gettering effectiveness of DGT.
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Published: 01 July 1987
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