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A LOW-ENERGY PHOTOLUMINESCENCE PEAK IN a-Si:H FILMS |
| MA Honglei;CAO Baocheng;LOU Wenxiu;YE Yagu* |
| Department of Physics, Shandong University, Jinan
*Shanghai Institute of Ceramics, Academia Sinica, Shanghai |
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| Cite this article: |
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MA Honglei, CAO Baocheng, LOU Wenxiu et al 1987 Chin. Phys. Lett. 4 142-144 |
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Abstract A 0.65-0.70eV luminescence peak in a-Si:H films after illumination is reported. It is found that exposure to light decreases total integrated intensity of luminescence and also produces two luminescence peaks, one is in the range 0.80-0.90eV, and the other is in 0.65-0.70eV. The former disapears by annealing at 190°C, but the latter can not be removed. Similar luminescence peaks are observed in a-Si:H films prepared under higher RF power without illumination.
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Published: 01 March 1987
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