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PHOTOREFLECTANCE STUDY OF GaAs/AlGaAs MULTI-QUANTUM WELLS |
| TANG Yinsheng*;JIANG Desheng;ZHUANG Weihua;CHEN Zhonggui |
| Institute of Semiconductors, Academia Sinica, Beijing
*University of Science and Technology of China, Hefei
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| Cite this article: |
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TANG Yinsheng, JIANG Desheng, ZHUANG Weihua et al 1987 Chin. Phys. Lett. 4 477-479 |
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Abstract Using photoreflectance (PR) at room temperature, we have studied GaAs/AlGaAs multi-quantum wells(MQWs) grown by molecular beam epitaxy. Analysis shows that the modulation mechanism of PR of MQWs is Stark shift of the subbands produced by photo-injection of carriers, which has first derivative functional lineshapes. By fitting the experimental spectra, an unusual transition coming from the interfaces in MQWs was observed.
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Published: 01 October 1987
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