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BACKSCATTERING AND CHANNELING STUDY OF ZINC IMPLANTED SILICON |
| YIN Shiduan;GU Quan;ZHANG Jingping;ZHANG Qichu;LIU Jiarui |
| Institute of Semiconductors, Academia Sinica, Beijing
Institute of Physics, Academia Sinica, Beijing |
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| Cite this article: |
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YIN Shiduan, GU Quan, ZHANG Jingping et al 1986 Chin. Phys. Lett. 3 381-384 |
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Abstract The depth of the amorphous-crystalline interface for 1 x 1015 to 1x1017Zn/cm2 ions in silicon has been measured by high resolution backscattering technique. The variation of this interface depth with fluency is found to agree well with the creation and overlap model of the simple direct amorphous zone.
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Published: 01 August 1986
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