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DEPTH PROFILES OF BROMINE IN 79Br+ ION IMPLANTED Pb1-xSnxTe OBTAINED BY SIMS MEASUREMENT AND THEORETICAL CALCULATION |
| XIA Yueyuan(Y.Y.HSIA);TAN Chunyu;WANG Yihua;HU Xierong*;XU qianwei** |
| Department of Physics, Shandong University, Jinan, Shandong
*Department of Optics, Shandong University, Jinan, Shandong
**Tianjin Institute of Semiconductors Technology, Tianjin |
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| Cite this article: |
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XIA Yueyuan(Y.Y.HSIA), TAN Chunyu, WANG Yihua et al 1986 Chin. Phys. Lett. 3 337-340 |
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Abstract The depth profile of Br in 79Br+ ion implanted lead-tin-telluride, Pb1-xSnxTe, was obtained by secondary ion mass spectrometry(SIMS). The SIMS profile has been compared with that obtained by our theoretical calculation, in which a more realistic interatomic potential and reasonable electronic stopping power were used. The SIMS result agrees well with the theoretical calculation.
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Published: 01 August 1986
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