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THEORY OF THE <100> UNIAXIAL STRESS DEPENDENCE OF THE DEEP LEVELS IN Gap and GaAs |
| REN Shangyuan;MAO Deqiang;LI Mingfu* |
| Department of Physics, University of Science and Technology of China, Hefei
*Graduate School, University of Science and Technology of China, Beijing
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| Cite this article: |
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REN Shangyuan, MAO Deqiang, LI Mingfu 1986 Chin. Phys. Lett. 3 313-316 |
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Abstract We extend previous theoretical work to predict the derivatives with respect to the <100> uniaxial stress of the substitutional deep point defect energy levels in Gap and GaAs which, for a defect at a specific site producing a level of particular symmetry, can be evaluated as a function of their energy levels in the band gap.
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Published: 01 July 1986
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