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THE STUDY ON DEFECTS IN SINGLE CRYSTAL SILICON WAFERS TREATED WITH DOUBLE-GETTERING TECHNIQUE |
| MA1 Zhenhong*;DAI Daoyang*;ZHOU Shiren;YE Yizheng;YE Shuichi |
| *Institute of Physics, Academia Sinica, Beijing
Harbin Institute of Technology, Harbin |
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| Cite this article: |
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MA Zhenhong, DAI Daoyang, ZHOU Shiren et al 1986 Chin. Phys. Lett. 3 113-116 |
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Abstract Investigations on the nature and states of the defects in single crystal wafers treated with double-gettering technique have been carried out by means of optical microscopy, electron microscopy, electron microanalysis and spread resistance. Phosphorus profile in these wafers was measured. And the effect of phosphorus on defects and resistivity was determined.
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Published: 01 March 1986
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