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THE STRUCTURE AND ELECTRONIC STATES OF NiSi2/Si(lll) INTERFACES |
| XU Yongnian;ZHANG Kaiming;XIE Xide |
| Institute of Modern Physics, Fudan University, Shanghai |
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| Cite this article: |
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XU Yongnian, ZHANG Kaiming, XIE Xide 1986 Chin. Phys. Lett. 3 89-92 |
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Abstract A theoretical investigation of NiSi2/Si (111) interfaces using empirical tight binding method and Slab Model is presented. The positions of Fermi level Ef for various types of interfaces has been compared. The heights of Ef for type-I(a) and type-II(a) or for type-I(b) and type-II(b) are the same; but there exists a difference of 0.leV between type-I(a) and -I(b) as well as for type-II(a) and -II(b). The local densities of states of some typical layers in the slab have also been studied.
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Published: 01 February 1986
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