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DEFECTS AND THEIR THERMAL ANNEALING BEHAVIOURS IN n- Si IMPLANTED WITH BORON AND PHOSPHORUS |
| CHEN Jian-xin;LI Ming-fu;LI Yan-jin |
| The Graduate School of the university of Science and Technology of China, Beijing |
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| Cite this article: |
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CHEN Jian-xin, LI Ming-fu, LI Yan-jin 1985 Chin. Phys. Lett. 2 401-404 |
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Abstract An up to date most detailed information of H(Hole) as well as E(Electron) traps produced by low dose (1011cm-2) boron and phosphorus implantation in n-Si and their thermal annealing behaviours are reported. For the first time, two hole traps H2(0.62), H3(0.49) of huge concentrations were detected in B+ implanted n-Si. They are tentatively assigned as boron related acceptors. H2(0.51) of huge concentration were detected in P+ implanted n-Si. Other three hole traps H1(0.63), H4( 0.37) and H5(0.15) were detected in both B+ and P+ implanted n-Si; they are thus unrelated to boron. E traps are also reported; some of these E traps are consistent with previous reports and some are new.
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Published: 01 September 1985
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