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THE EXPONENTIAL ABSORPTION EDGE AND THE LOW ABSORPTION RANGE SHOULDER OF a-Si:H |
| HAN Da-xing*;MIAO Hua-lan;WU Duo-huai;CHENG Ru-quang |
| *Institute of Physics, Academia Sinica, Beijing
Institute of Ceramics, Academia Sinica, Shanghai |
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| Cite this article: |
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HAN Da-xing, MIAO Hua-lan, WU Duo-huai et al 1985 Chin. Phys. Lett. 2 137-140 |
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Abstract We have used optical and photoconductivity measurements on a-Si:H to acquire information about the band tail and gap states. The experimental results show that annealing and exposure do not change the slope of the absorption edge at certain temperatures but change the sub-gap excitation.
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Published: 01 March 1985
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