PHOTOLUMINESCENCE STUDIES OF GaAs-GaAlAs MULTIPLE QUANTUM WELLS

Chin. Phys. Lett.

1985, Vol. 2

Issue (12): 529-532 DOI:

Original Articles

PHOTOLUMINESCENCE STUDIES OF GaAs-GaAlAs MULTIPLE QUANTUM WELLS

XU Zhong-ying;XU Ji-zong;CHEN Zong-gui;ZHUANG Wei-hua;XU Jun-ying;ZHENG Bao-zhen;TENG Da;LI Yu-zhang

Institute of Semiconductors, Academia Sinica, Beijing

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XU Zhong-ying, XU Ji-zong, CHEN Zong-gui et al 1985 Chin. Phys. Lett. 2 529-532

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Abstract Photoluminescence experiments have been performed on GaAg-GaAlAs. quantum well structures with well widths ranging from 40Å to 145Å. Both the intrinsic and extrinsic transitions have been observed. Relatively strong interface-related luminescence is believed to be due to the presence of more trapped impurities at the interfaces.

Published: 01 December 1985

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1985/V2/I12/0529

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	XU Zhong-ying
	XU Ji-zong
	CHEN Zong-gui
	ZHUANG Wei-hua
	XU Jun-ying
	ZHENG Bao-zhen
	TENG Da
	LI Yu-zhang

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