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THE MEASUREMENT ON MAGNETOPHONON RESONANCE OF 2D ELECTRON SYSTEM IN GaAs-AlxGa1-xAs HETEROSTRUCTURE INTERFACE |
| WU Yong-sheng;HUANG Yi;YANG Fu-min;ZHAO Xi-chao;ZHOU Jun-ming |
| Institute of Physics, Academia Sinica, Beijing |
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| Cite this article: |
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WU Yong-sheng, HUANG Yi, YANG Fu-min et al 1985 Chin. Phys. Lett. 2 501-504 |
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Abstract The 20 magnetophonon oscillatory in GaAs-AlxGa1-xAs hetero-structure interface, grown by MBE, has been investigated by means of the second derivative of the magnetoresistance under high pulsed magnetic fields up to 40T. The fundamental magnetic field has been measured as 23.7T and the damping facter γ , 2D electron effective mass m* for our sample are 1.58 and 0. 0747me, respectively.
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Published: 01 November 1985
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