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IN SITU OBSERVATION OF THE H-INDUCED DEFECTS IN SILICON SINGLE CRYSTALS |
| MA1 Zhen-hong;W. Graeff* |
| Institute of Physics, Academia Sinica, Beijing
*HASYLAB, DESY, Hamburg, F. R. Germany |
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| Cite this article: |
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MA Zhen-hong, W. Graeff 1985 Chin. Phys. Lett. 2 493-496 |
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Abstract The hydrogen-induced defects in FZ silicon grown in hydrogen atmosphere have been investigated by both the conventional and the in situ white beam synchrotron radiation topography. The formation process of the defects is discussed.
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Published: 01 November 1985
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