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STUDIES ON SEMICONDUCTOR SURFACE PARAMETER BY USE OF SAW TECHNIQUE |
WU Wen-qiu;QIN Xi |
Acoustics Institute of Nanjing University, Nanjing |
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Cite this article: |
WU Wen-qiu, QIN Xi 1985 Chin. Phys. Lett. 2 485-488 |
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Abstract Using the concepts of continuity of interface impedance, the changes of both the velocity and attenuation of surface acoustic wave (SAW) caused by acousto-electric interaction are considered layer by lager under different semicon-ductor surface conditions for the piezoelectric-insulator-semiconductor(PIS) structures. Surface densities of states and fixed charge densities are evaluated by computer fitting and the results agree well with those obtained by other methods.
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Published: 01 November 1985
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