Chin. Phys. Lett.  1985, Vol. 2 Issue (11): 485-488    DOI:
Original Articles |
STUDIES ON SEMICONDUCTOR SURFACE PARAMETER BY USE OF SAW TECHNIQUE
WU Wen-qiu;QIN Xi
Acoustics Institute of Nanjing University, Nanjing
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WU Wen-qiu, QIN Xi 1985 Chin. Phys. Lett. 2 485-488
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Abstract Using the concepts of continuity of interface impedance, the changes of both the velocity and attenuation of surface acoustic wave (SAW) caused by acousto-electric interaction are considered layer by lager under different semicon-ductor surface conditions for the piezoelectric-insulator-semiconductor(PIS) structures. Surface densities of states and fixed charge densities are evaluated by computer fitting and the results agree well with those obtained by other methods.
Published: 01 November 1985
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1985/V2/I11/0485
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QIN Xi
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