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THERMAL QUENCHING, INFRARED QUENCHING AND SUPRALINEARITY IN a-Si:H |
| HAN Da-xing |
| Institute of Physics, Academia Sinica, Beijing |
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| Cite this article: |
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HAN Da-xing 1984 Chin. Phys. Lett. 1 65-68 |
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Abstract We have tested the temperature and incident flux dependence of photoconductivity and dual beam infrared photoconductivity spectra of a-Si:H samples in annealed states A* and A, and the light soaked states B1 and B2; and observed that they were different for the 4 different states. We believe that light exposures create two kinds of centers, which we name α and τ. A model is suggested to explain the experimental results.
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Published: 30 December 1984
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