| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Ultrafast charge transfer in dual graphene-WS$_{2}$ van der Waals quadrilayer heterostructures |
| Zong-Peng Song1,2,3, Hai-Ou Zhu4, Wen-Tao Shi1,2,3, Da-Lin Sun1,2,3, Shuang-Chen Ruan1** |
1Shenzhen Key Laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060
2Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes, Shenzhen University, Shenzhen 518060
3Guangdong Provincial Key Laboratory of Mico/Nano Optomechatronics Engineering, Shenzhen University, Shenzhen 518060
4College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118
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| Cite this article: |
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Zong-Peng Song, Hai-Ou Zhu, Wen-Tao Shi et al 2018 Chin. Phys. Lett. 35 127801 |
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Abstract Using dual graphene–WS$_{2}$ quadrilayer heterostructures as an example, we find that the ultrafast transfer of electrons from WS$_{2}$ to graphene takes place within 114 fs, and the Coulomb field of the charge can effectively affect the interlayer electron transfer. This effect illustrates that the charge transfer in such van der Waals heterostructures may be controlled by an externally applied electric field for promising applications in photoelectric devices.
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Received: 16 July 2018
Published: 23 November 2018
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| PACS: |
78.47.J-
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(Ultrafast spectroscopy (<1 psec))
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78.47.jb
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(Transient absorption)
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73.40.-c
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(Electronic transport in interface structures)
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42.70.-a
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(Optical materials)
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| Fund: Supported by the National Key Research and Development Program under Grant No 2016YFA0401100, the National Natural Science Foundation of China under Grant No 61575129, the National High Technology Research and Development Program of China under Grant No 2015AA021102, and the Major Science and Technology Project of Guangdong Province under Grant No 2140B010131006. |
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