| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Structural Evolution and Phase Change Properties of C-Doped Ge$_{2}$Sb$_{2}$Te$_{5}$ Films During Heating in Air |
| Long Zheng1,2**, Xing-Ming Yang2, Yi-Feng Hu1, Liang-Jun Zhai1, Jian-Zhong Xue1, Xiao-Qin Zhu1**, Zhi-Tang Song3 |
1School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001
2Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
3State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of MicroSystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
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| Cite this article: |
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Long Zheng, Xing-Ming Yang, Yi-Feng Hu et al 2018 Chin. Phys. Lett. 35 126801 |
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Abstract We elucidate the importance of a capping layer on the structural evolution and phase change properties of carbon-doped Ge$_{2}$Sb$_{2}$Te$_{5}$ (C-GST) films during heating in air. Both the C-GST films without and with a thin SiO$_{2}$ capping layer (C-GST and C-GST/SiO$_{2}$) are deposited for comparison. Large differences are observed between C-GST and C-GST/SiO$_{2}$ films in resistance-temperature, x-ray diffraction, x-ray photoelectron spectroscopy, Raman spectra, data retention capability and optical band gap measurements. In the C-GST film, resistance-temperature measurement reveals an unusual smooth decrease in resistance above 110$^{\circ}\!$C during heating. X-ray diffraction result has excluded the possibility of phase change in the C-GST film below 170$^{\circ}\!$C. The x-ray photoelectron spectroscopy experimental result reveals the evolution of Te chemical valence because of the carbon oxidation during heating. Raman spectra further demonstrate that phase changes from an amorphous state to the hexagonal state occur directly during heating in the C-GST film. The quite smooth decrease in resistance is believed to be related with the formation of Te-rich GeTe$_{4-n}$Ge$_{n}$ ($n=0$, 1) units above 110$^{\circ}\!$C in the C-GST film. The oxidation of carbon is harmful to the C-GST phase change properties.
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Received: 19 July 2018
Published: 23 November 2018
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| Fund: Supported by the National Natural Science Foundation of China under Grant No 11704161, the Natural Science Foundation of Jiangsu Province under Grant Nos BK20170309 and BK20151172, and the Changzhou Science and Technology Bureau under Grant Nos CJ20159049 and CJ20160028. |
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| [1] | Rao F, Ding K Y, Zhou Y X et al 2017 Science 358 1423 | | [2] | Guo T Q, Song S N, Li L et al 2017 Scr. Mater. 129 56 | | [3] | Branicio P S, Bai K, Ramanarayan H et al 2018 Phys. Rev. Mater. 2 043401 | | [4] | Zheng L, Hu Y F, Zhai L J et al 2017 Eur. Phys. J. Appl. Phys. 80 30101 | | [5] | Konstantinou K, Lee T H, Mocanu F C et al 2018 Proc. Natl. Acad. Sci. USA 115 5353 | | [6] | Zheng L, Zhu X Q, Zhai L J et al 2017 Eur. Phys. J. Appl. Phys. 77 30102 | | [7] | Kim J H, Byeon D S, Ko D H et al 2018 Thin Solid Films 659 1 | | [8] | Li T, Wu L C, Ji X L et al 2018 AIP Adv. 8 025201 | | [9] | Jung M C, Lee Y M and Kim K 2014 Curr. Appl. Phys. 14 1421 | | [10] | Cho E, Youn Y and Han S 2011 Appl. Phys. Lett. 99 183501 | | [11] | Sist M, Kasai H, Hedegaard E M J et al 2018 Phys. Rev. B 97 094116 | | [12] | Zhu X Q, Zhang R, Hu Y F et al 2018 Chin. Phys. Lett. 35 056803 | | [13] | Park J H, Kim S W, Kim J H et al 2015 J. Appl. Phys. 117 115703 | | [14] | Hu Y, Zou H, Zhang J et al 2015 Appl. Phys. Lett. 107 263105 | | [15] | Nemec P, Nazabal V, Moreac A et al 2012 Mater. Chem. Phys. 136 935 | | [16] | Ji X L, Wu L C, Zhu M et al 2015 RSC Adv. 5 24966 | | [17] | Mazzarello R, Caravati S, Angioletti-Uberti S et al 2010 Phys. Rev. Lett. 104 085503 | | [18] | Fu J, Shen X, Xu Y S et al 2012 Mater. Lett. 88 148 | | [19] | Andrikopoulos K S, Yannopoulos S N, Voyiatzis G A et al 2006 J. Phys.: Condens. Matter 18 965 | | [20] | Sosso G C, Caravati S, Mazzarello R et al 2011 Phys. Rev. B 83 134201 | | [21] | Liu R R, He Z F, Zhai J W et al 2016 Mater. Lett. 163 20 | | [22] | Song K H, Beak S C and Lee H Y 2010 J. Appl. Phys. 108 024506 |
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