| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Two Gaps in Semiconducting EuSbTe$_3$ Studied by Angle-Resolved Photoemission Spectroscopy |
| Cong-Cong Fan1,2, Ji-Shan Liu1, Kai-Li Zhang1, Wan-Ling Liu1, Xiang-Le Lu1, Zheng-Tai Liu1, Dong Wu3, Zhong-Hao Liu1**, Da-Wei Shen1,4**, Li-Xing You1,4 |
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2University of Chinese Academy of Sciences, Beijing 100049
3International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871
4CAS Center for Excellence in Superconducting Electronics, Shanghai 200050
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| Cite this article: |
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Cong-Cong Fan, Ji-Shan Liu, Kai-Li Zhang et al 2018 Chin. Phys. Lett. 35 077104 |
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Abstract Using angle-resolved photoemission spectroscopy, we study the low-energy electronic structure of a layered ternary telluride EuSbTe$_3$ semiconductor. It is found that the photoemission constant energy contours can be well described by the simple two-parameter ($t_{\rm perp}$ and $t_{\rm para}$) tight-binding model based on the Te orbitals in square-net planes of EuSbTe$_3$, suggesting its Te 5$p$ orbitals dominated low-lying electronic structure, which is reminiscent of other rare-earth tritellurides. However, a possible charge-density-wave gap of 80 meV is found to persist in 300 K, which renders the unexpected semiconducting properties in EuSbTe$_3$. Moreover, we reveal an extra band gap occurring around 200 meV below the Fermi level at low temperatures, which can be attributed to the interaction between the main and folded bands due to lattice scatterings. Our findings provide the first comprehensive understanding of the electronic structure of layered ternary tellurides, which lays the basis for future research on these compounds.
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Received: 23 April 2018
Published: 24 June 2018
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| PACS: |
71.45.Lr
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(Charge-density-wave systems)
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71.20.Mq
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(Elemental semiconductors)
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79.60.Bm
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(Clean metal, semiconductor, and insulator surfaces)
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| Fund: Supported by the National Key R&D Program of China under Grant No 2016YFA0300204, the National Basic Research Program of China under Grant No 2015CB654901, the National Natural Science Foundation of China under Grant Nos 11574337, 11227902, 11474147 and 11704394, the Shanghai Sailing Program under Grant No 17YF1422900, and the Award for Outstanding Member in Youth Innovation Promotion Association CAS. |
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