| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Electrically and Optically Bistable Operation in an Integration of a 1310nm DFB Laser and a Tunneling Diode |
| Ya-Jie Li1,2, Jia-Qi Wang1, Lu Guo1,2, Guang-Can Chen1,2, Zhao-Song Li1,2, Hong-Yan Yu1, Xu-Liang Zhou1, Huo-Lei Wang3, Wei-Xi Chen4, Jiao-Qing Pan1,2** |
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049
3Department of Applied Physics and Materials Science, California Institute of Technology, California 91125, USA
4State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
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| Cite this article: |
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Ya-Jie Li, Jia-Qi Wang, Lu Guo et al 2018 Chin. Phys. Lett. 35 044202 |
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Abstract We experimentally demonstrate an InP-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source.
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Received: 24 November 2017
Published: 13 March 2018
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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42.65.Pc
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(Optical bistability, multistability, and switching, including local field effects)
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| Fund: Supported by the National Key Research and Development Program of China under Grant No 2017YFB0405301, and the National Natural Science Foundation of China under Grant Nos 61604144 and 61504137. |
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| [1] | Esaki L 1958 Phys. Rev. 109 603 | | [2] | Wang H, Mi J, Zhou X, Meriggi L, Steer M, Cui B, Chen W, Pan J and Ding Y 2013 Opt. Lett. 38 4868 | | [3] | Weng Q C, An Z H, Xiong D Y and Zhu Z Q 2015 Chin. Phys. Lett. 32 108503 | | [4] | Wang H, Zhou X, Yu H, Mi J, Wang J, Bian J, Ding Y, Chen W, Wang W and Pan J 2014 Appl. Phys. Lett. 104 251101 | | [5] | Romeira B, Seunarine K, Ironside C N, Kelly A E and Figueiredo J M 2011 IEEE Photon. Technol. Lett. 23 1148 | | [6] | Romeira B, Javaloyes J, Ironside C N, Figueiredo J M, Balle S and Piro O 2013 Opt. Express 21 20931 | | [7] | Slight T J, Ironside C N, Stanley C R and Hopkinson M 2005 IEEE LEOS Annu. Meeting Conf. Proc. (Sydney, Australia 23–27 October 2005) p 146 | | [8] | Weng Q C, An Z H, Hou Y and Zhu Z Q 2013 Chin. Phys. Lett. 30 048501 | | [9] | Mi J, Yu H, Wang H, Tan S, Chen W, Ding Y and Pan J 2015 IEEE Photon. Technol. Lett. 27 169 | | [10] | Jayaraman V, Jiang J, Li H, Heim P J S, Cole G D, Potsaid B, Fujimoto J G and Cable A 2011 Conf. Lasers Electro-Opt. (Baltimore Maryland, United States 1–6 May 2011) p 1 | | [11] | Leung A, Shankar P M and Mutharasan R 2008 Sens. Actuators B 131 640 | | [12] | Sugama A, Kawaguchi K, Nishizawa M, Muranaka H and Arakawa Y 2013 Opt. Express 21 24231 | | [13] | Torres-Ferrera P, Pacheco-Ramírez L and Gutiérrez-Castrejón R 2016 IEEE Lat. Am. Trans. 14 2681 | | [14] | Slight T J, Romeira B, Wang L, Figueiredo J M L, Wasige E and Ironside C N 2008 IEEE J. Quantum Electron. 44 1158 | | [15] | Bao M and Wang K L 2006 IEEE Trans. Electron Devices 53 2564 | | [16] | Sakurai A and Tanimura Y 2014 New J. Chem. 16 015002 | | [17] | Ternent G and Paul D J 2012 IEEE Trans. Electron Devices 59 3555 | | [18] | Sze S M and Kwok K N G 2006 Physics of Semiconductor Devices 3rd edn (New York: Wiley) | | [19] | Goldman V J, Tsui D C and Cunningham J E 1987 Phys. Rev. Lett. 58 1256 | | [20] | Rahman M and Davies J H 1990 Semicond. Sci. Technol. 5 168 | | [21] | Gravé I, Kan S C, Griffel G, Wu S W, Sa'ar A and Yariv A 1991 Appl. Phys. Lett. 58 110 | | [22] | Slight T J and Ironside C N 2007 IEEE J. Quantum Electron. 43 580 |
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