| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Analytical Descriptions of Magnetic Properties and Magnetoresistance in n-Type HgCr$_2$Se$_4$ |
| Chao-Jing Lin, You-Guo Shi, Yong-Qing Li** |
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
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| Cite this article: |
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Chao-Jing Lin, You-Guo Shi, Yong-Qing Li 2016 Chin. Phys. Lett. 33 077501 |
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Abstract We present a detailed investigation of magnetic properties of colossal magnetoresistance material HgCr$_2$Se$_4$. While spontaneous magnetization and zero-field magnetic susceptibility are found to follow asymptotic scaling laws for a narrow range of temperatures near the critical point, two methods with connections to the renormalization group theory provide analytical descriptions of the magnetic properties for much wider temperature ranges. Based on this, an analytical formula is obtained for the temperature dependence of the low field magnetoresistance in the paramagnetic phase.
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Received: 07 April 2016
Published: 01 August 2016
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| PACS: |
75.50.Pp
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(Magnetic semiconductors)
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75.60.Ej
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(Magnetization curves, hysteresis, Barkhausen and related effects)
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75.40.Cx
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(Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.))
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75.10.-b
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(General theory and models of magnetic ordering)
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