| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Hot-Carrier Effects on Total Dose Irradiated 65nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors |
| Qi-Wen Zheng1,2**, Jiang-Wei Cui1,2, Hang Zhou1,2,3, De-Zhao Yu1,2,3, Xue-Feng Yu1,2, Qi Guo1,2 |
1Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011
2Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011
3University of Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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Qi-Wen Zheng, Jiang-Wei Cui, Hang Zhou et al 2016 Chin. Phys. Lett. 33 076102 |
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Abstract The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs) is investigated. Experimental results show that hot-carrier degradations on irradiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation (STI). The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.
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Received: 04 May 2016
Published: 01 August 2016
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| PACS: |
61.80.Ed
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(γ-ray effects)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.Tv
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(Field effect devices)
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