| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Fabrication and Characterization of Fe-Doped In2O3 Dilute Magnetic Semiconducting Nanowires |
| ZHANG Jun-Ran1, WU Zhen-Yao1, LIU Yu-Jie1, LV Zhan-Peng1, NIU Wei1, WANG Xue-Feng1**, DU Jun2, LIU Wen-Qing3, ZHANG Rong1, XU Yong-Bing1,3** |
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Department of Physics, Nanjing University, Nanjing 210093
3York-Nanjing International Center of Spintronics (YNICS), Department of Electronics, The University of York, YO10 3DD, United Kingdom
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| Cite this article: |
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ZHANG Jun-Ran, WU Zhen-Yao, LIU Yu-Jie et al 2015 Chin. Phys. Lett. 32 037501 |
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Abstract Fe-doped In2O3 dilute magnetic semiconducting nanowires are fabricated on Au-deposited Si substrates by the chemical vapor deposition technique. It is confirmed by energy dispersive x-ray spectroscopy (EDS), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy that Fe has been successfully doped into lattices of In2O3 nanowires. The EDS measurements reveal a large amount of oxygen vacancies existing in the Fe-doped In2O3 nanowires. The Fe dopant exists as a mixture of Fe2+ and Fe3+, as revealed by the XPS. The origin of room-temperature ferromagnetism in Fe-doped In2O3 nanowires is explained by the bound magnetic polaron model.
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Published: 26 February 2015
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| PACS: |
75.10.-b
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(General theory and models of magnetic ordering)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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06.60.-c
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(Laboratory procedures)
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