| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Morphology and Microstructure of InAs Nanowires on GaAs Substrates Grown by Molecular Beam Epitaxy |
| SHI Sui-Xing1, LU Zhen-Yu1, ZHANG Zhi2, ZHOU Chen1, CHEN Ping-Ping1**, ZOU Jin2,3 |
1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
2Materials Engineering, University of Queensland, QLD 4072, Australia
3Center for Microscopy and Microanalysis, University of Queensland, QLD 4072, Australia
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SHI Sui-Xing, LU Zhen-Yu, ZHANG Zhi et al 2014 Chin. Phys. Lett. 31 098101 |
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Abstract We successfully grow high-quality wurtzite InAs nanowires on GaAs substrates. The influences of growth temperature and orientations of GaAs substrates on the morphology and microstructure of InAs nanowires are also investigated. We find that a low growth temperature (330°C) is beneficial to the synthesis of uniform defect-free InAs nanowires. Meanwhile, InAs nanowires along ?111?B direction are always dominated despite the variation of GaAs substrate orientations.
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