| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Improved Performance of Phthalocyanine Derivative Field-Effect Transistors by Inserting a Para-Quarterphenyl as the Inducing Layer |
| DONG Ni1,2, WU Xiao-Ming1,2**, DANG Huan-Qin1,2, LIU Dong-Yue1,2, ZHANG Qiang1,2, WEI Jun2,3, YIN Shou-Gen1,2** |
1Institute of Material Physics, Tianjin University of Technology, Tianjin 300384
2Key Laboratory of Display Material and Photoelectric Devices (Ministry of Education), Tianjin University of Technology, Tianjin 300384
3Singapore Institute of Manufacturing Technology, 71 Nanyang Drive 638075, Singapore
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| Cite this article: |
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DONG Ni, WU Xiao-Ming, DANG Huan-Qin et al 2014 Chin. Phys. Lett. 31 058501 |
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Abstract We investigate the phthalocyanine derivative organic field-effect transistors (OFETs) using a novel para -quaterphenyl (p-4p) as the inducing layer. Compared to the devices without the p-4p inducing layer, the performances of p-type (copper phthalocyanine) and n-type (fluorinated copper phthalocyanine) OFETs with optimized thickness of p-4p thin films are greatly enhanced. Both the field-effect mobility and the on/off ratio of the two-type devices are improved by one order of magnitude compared to those of the control devices. This remarkable improvement is attributed to the introduction of p-4p, which can form a highly oriented and continuous phthalocyanine derivative film with the molecular π–π stack direction parallel to the substrate.
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Published: 24 April 2014
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| PACS: |
85.30.Tv
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(Field effect devices)
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72.80.Le
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(Polymers; organic compounds (including organic semiconductors))
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