| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
Electrically Pumped Ultraviolet Random Lasing from p-ZnO:As Based on p-ZnO/N-GaN Heterojunction |
| ZHANG Yuan-Tao1**, XIA Xiao-Chuan2, WU Bin1, SHI Zhi-Feng1, YANG Fan1, YANG Xiao-Tian3, ZHANG Bao-Lin1, DU Guo-Tong1,2 |
1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012
2School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023
3School of electrical and electronic information, Jilin Institute of Architecture and Civil Engineering, Changchun 130118
|
|
| Cite this article: |
|
ZHANG Yuan-Tao, XIA Xiao-Chuan, WU Bin et al 2014 Chin. Phys. Lett. 31 058101 |
|
|
|
|
Abstract p-ZnO:As is prepared by the GaAs interlayer doping method. The potential applications of p-ZnO:As are evaluated by applying it into the construction of a p-ZnO/n-GaN heterojunction, though its hall, electrochemical capacitance-voltage and photoluminescence results show a hole concentration at the level of ～1017 cm?3 and a good optical quality. Ultraviolet random lasing is detected from the studied device under forward bias. Specific lasing modes are confirmed to originate from p-ZnO:As by further introducing the p-ZnO/MgO/n-GaN heterostructure. The resulting random lasing phenomena demonstrate the promising prospects in device application of p-ZnO:As fabricated by using our methods.
|
|
|
Published: 24 April 2014
|
|
| PACS: |
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
| |
61.72.uj
|
(III-V and II-VI semiconductors)
|
| |
85.30.-z
|
(Semiconductor devices)
|
|
|
|
|
|
[1] Mang A, Reimann K and Rüenacke S 1995 Solid State Commun. 94 251
[2] Teke A, ?gü, Do?an S, Gu X, Morko? H, Nemeth B, Nause J and Everitt H O 2004 Phys. Rev. B 70 195207
[3] Reynolds D C, Look D C and Jogai B 1996 Solid State Commun. 99 873
[4] Bagnall D M, Chen Y F, Zhu Z, Yao T, Koyama S, Shen M Y and Goto T 1997 Appl. Phys. Lett. 70 2230
[5] ?gü, Alivov Y I, Liu C, Teke A, Reshchikov M A, Do?an S, Avrutin V, Cho S J and Morko?a H 2005 J. Appl. Phys. 98 041301
[6] McCluskey M D and Jokela S J 2009 J. Appl. Phys. 106 071101
[7] Choi Y S, Kang J W, Dae-Kue H and Park S J 2010 IEEE Trans. Electron Devices 57 26
[8] Chu S, Wang G, Zhou W, Lin Y, Chernyak L, Zhao J, Kong J, Li L, Ren J and Liu J 2011 Nat. Nanotechnol. 6 506
[9] Look D C, Burgener G M R R H, I I and Sizelove J R 2004 Appl. Phys. Lett. 85 5269
[10] Zhang B, Li M, Wang J Z and Shi L Q 2013 Chin. Phys. Lett. 30 027303
[11] Xiu F X, Yang Z, Mandalapu L J, Zhao D T, Liu J L and Beyermann W P 2005 Appl. Phys. Lett. 87 152101
[12] Yuan G D, Zhang W J, Jie J S, Fan X, Zapien J A, Leung Y H, Luo L B, Wang P F, Lee C S and Lee S T 2008 Nano Lett. 8 2591
[13] Ataev B M, Lundin W V, Mamedov V V, Bagamadova A M and Zavarin E E 2001 J. Phys.: Condens. Matter 13 L211
[14] Xia X, Shi Z, Zhao L, Zhao W, Dong X, Zhang B and Du G 2011 J. Lumin. 131 280
[15] Shi Z, Xia X, Yin W, Zhang S, Wang H, Wang J, Zhao L, Dong X, Zhang B and Du G 2012 Appl. Phys. Lett. 100 101112
[16] Meyer B K, Alves H, Hofmann D M, Kriegseis W, Forster D, Bertram F, Christen J, Hoffmann A, Stra?urg M, Dworzak M, Haboeck U and Rodina A V 2004 Phys. Status Solidi B 241 231
[17] Ahn C H, Kim Y Y, Kim D C, Mohanta S K and Cho H K 2009 J. Appl. Phys. 105 013502
[18] Reshchikov M A and Morkoc H 2005 J. Appl. Phys. 97 061301
[19] Liu C Y, Xu H Y, Ma J G, Li X H, Zhang X T, Liu Y C and Mu R 2011 Appl. Phys. Lett. 99 063115
[20] Ma X, Chen P, Li D, Zhang Y and Yang D 2007 Appl. Phys. Lett. 91 251109
[21] Fallert J, Dietz R J B, Sartor J, Schneider D, Klingshirn C and Kalt H 2009 Nat. Photon. 3 279
[22] Klein A 2012 Thin Solid Films 520 3721
[23] Hong S K, Hanada T, Makino H, Chen Y, Ko H J, Yao T, Tanaka A, Sasaki H and Sato S 2001 Appl. Phys. Lett. 78 3349
[24] Shi K, Zhang P F, Wei H Y, Jiao C M, Li C M, Liu X L, Yang S Y, Zhu Q S and Wang Z G 2012 Solid State Commun. 152 938
[25] Craft H S, Collazo R, Losego M D, Mita S, Sitar Z and Maria J P 2007 J. Appl. Phys. 102 074104
[26] Chen P, Ma X and Yang D 2006 Appl. Phys. Lett. 89 111112
[27] Zhang L C, Zhao F Z, Wang F F and Li Q S 2013 Chin. Phys. B 22 128502 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
