Chin. Phys. Lett.  2014, Vol. 31 Issue (04): 047701    DOI: 10.1088/0256-307X/31/4/047701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
An Enhanced Photoelectric Conversion Efficiency of n-Type Crystalline Silicon p–n Junctions Using a Ferroelectric Passivation Layer
LI Zi-Zhen1, TANG Rong-Sheng2, WANG Xiao-Feng1, ZHENG Fen-Gang1**
1Department of Physics and Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006
2Department of Electronic and Information Engineering, Taizhou Polytechnic College, Taizhou 225300
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LI Zi-Zhen, TANG Rong-Sheng, WANG Xiao-Feng et al  2014 Chin. Phys. Lett. 31 047701
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Abstract A multilayered structure consisting of ferroelectric Pb(Zr,Ti)O3 (PZT) film is deposited by sputtering on the crystalline silicon p-n junction without any buffer layer. The photovoltaic output of the p-n junction is greatly enhanced due to the usage of In2O3:Sn(ITO)/PZT as top surface passivation layers. The short circuit current and photoelectric conversion efficiency of the p-n junction with ITO/PZT ferroelectric films increase about four and six times, respectively, compared with those without any passivation layers. Improvement in the passivated device is mainly attributed to the built-in field at the ITO/PZT interface.
Received: 03 January 2014      Published: 25 March 2014
PACS:  77.55.fg (Pb(Zr,Ti)O3-based films)  
  77.55.df (For silicon electronics)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/31/4/047701       OR      https://cpl.iphy.ac.cn/Y2014/V31/I04/047701
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LI Zi-Zhen
TANG Rong-Sheng
WANG Xiao-Feng
ZHENG Fen-Gang
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