| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Simulation and Experimentation for Low Density Drain AlGaN/GaN HEMT |
| WANG Chong**, HE Yun-Long, DING Ning, ZHENG Xue-Feng, ZHANG Peng, MA Xiao-Hua, ZHANG Jin-Cheng, HAO Yue |
Key Lab of Wide Band Gap Semiconductor Materials and Devices, and Institute of Microelectronics, Xidian University, Xi'an 710071
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| Cite this article: |
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WANG Chong, HE Yun-Long, DING Ning et al 2014 Chin. Phys. Lett. 31 038501 |
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Abstract In order to improve the breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs), we report a feasible method of low density drain (LDD) HEMT. The fluoride-based plasma treatment using CF4 gas is performed on the drain-side of the gate edge. The channel two-dimensional electron gas (2DEG) concentrations are modulated by fluoride plasma treatment, and the peak electric field at the gate edge is effectively reduced, so the breakdown voltage is improved. The electric field distributions of the LDD-HEMTs are simulated using the Silvaco software, and the peak of the electric field on the gate edge is effectively reduced. Experimental results show that, compared with the conventional HEMT, LDD-HEMTs have a lower reverse leakage current of the gate, and the breakdown voltage is increased by 36%. The current collapse characteristics of the LDD-HEMTs are confirmed by dual-pulse measurement, and an obvious pulse current reduction is due to the surface states by implanting F ions between the gate and the drain.
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Received: 26 November 2013
Published: 28 February 2014
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| PACS: |
85.30.Tv
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(Field effect devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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