FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Fabrication and Characterization of High Power 1064-nm DFB Lasers |
TAN Shao-Yang**, ZHAI Teng, LU Dan, WANG Wei, ZHANG Rui-Kang, JI Chen |
Key Laboratory of Semiconductors Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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Cite this article: |
TAN Shao-Yang, ZHAI Teng, LU Dan et al 2013 Chin. Phys. Lett. 30 114202 |
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Abstract A ridge waveguide distributed-feedback laser emitting at 1064 nm is demonstrated. Two low-temperature-grown In0.21Ga0.79As/GaAs quantum wells are employed as the active layer. A second-order grating is formed by holographic photolithography and wet-etching. The laser operates at a single-mode up to 255 mA, corresponding to an output power of 90 mW.
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Received: 12 August 2013
Published: 30 November 2013
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PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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81.07.St
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(Quantum wells)
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42.40.Eq
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(Holographic optical elements; holographic gratings)
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42.60.Lh
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(Efficiency, stability, gain, and other operational parameters)
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