Chin. Phys. Lett.  2013, Vol. 30 Issue (11): 114202    DOI: 10.1088/0256-307X/30/11/114202
FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
Fabrication and Characterization of High Power 1064-nm DFB Lasers
TAN Shao-Yang**, ZHAI Teng, LU Dan, WANG Wei, ZHANG Rui-Kang, JI Chen
Key Laboratory of Semiconductors Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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TAN Shao-Yang, ZHAI Teng, LU Dan et al  2013 Chin. Phys. Lett. 30 114202
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Abstract A ridge waveguide distributed-feedback laser emitting at 1064 nm is demonstrated. Two low-temperature-grown In0.21Ga0.79As/GaAs quantum wells are employed as the active layer. A second-order grating is formed by holographic photolithography and wet-etching. The laser operates at a single-mode up to 255 mA, corresponding to an output power of 90 mW.
Received: 12 August 2013      Published: 30 November 2013
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
  81.07.St (Quantum wells)  
  42.40.Eq (Holographic optical elements; holographic gratings)  
  42.60.Lh (Efficiency, stability, gain, and other operational parameters)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/30/11/114202       OR      https://cpl.iphy.ac.cn/Y2013/V30/I11/114202
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TAN Shao-Yang
ZHAI Teng
LU Dan
WANG Wei
ZHANG Rui-Kang
JI Chen
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