| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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A Distributed Phase Shifter Using Bi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3 Thin Films |
| LI Ru-Guan, JIANG Shu-Wen**, GAO Li-Bin, LI Yan-Rong |
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054
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| Cite this article: |
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LI Ru-Guan, JIANG Shu-Wen, GAO Li-Bin et al 2013 Chin. Phys. Lett. 30 078503 |
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Abstract We report the demonstration of a monolithic phase shifter employing Bi1.5Zn1.0Nb1.5O7 (BZN)/Ba0.5Sr0.5TiO3 (BST) thin films on sapphire substrates. The BST and BZN thin films are successively deposited by radio?frequency magnetron sputtering. A distributed phase shifter with a coplanar?waveguide transmission line periodically loaded with the BZN/BST capacitors is fabricated. The return loss of the circuit is better than -13 dB from 1 to 12 GHz, and it provides 65° phase shift with an insertion loss of -4 dB at 12 GHz. The results show that BZN/BST thin films are promising candidate dielectrics for rf/microwave tunable applications.
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Received: 26 February 2013
Published: 21 November 2013
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| PACS: |
85.50.-n
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(Dielectric, ferroelectric, and piezoelectric devices)
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84.40.-x
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(Radiowave and microwave (including millimeter wave) technology)
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77.55.-g
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(Dielectric thin films)
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