| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Numerical Simulation of 4H-SiC Metal Semiconductor Field Transistors |
| Kuang-Po HSUEH1**, Shih-Tzung SU2, Jun ZENG2
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1Department of Electronics Engineering, Vanung University, Chung-Li 32061, Taiwan
2R&D Department, InPowerSemiconductor Corp., Ltd, Hong Kong
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| Cite this article: |
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Kuang-Po HSUEH, Shih-Tzung SU, Jun ZENG 2011 Chin. Phys. Lett. 28 078502 |
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Abstract This work simulates the performance of 4H-SiC MESFETs and establishes the optimum device structure for dc and rf applications that operate at high voltages. Devices with various channel doping, buffer layer doping, recess thickness, gate-to-drain spacing and temperatures of operation are considered. The simulation results reveal that a p-type buffer layer of 5×1015 cm−3 and a channel layer of 1×1017 cm−3 yield favorable results. The cut-off frequency is 22.53 GHz, the maximum transconductance is 50.55 mS/mm, the drain saturation current is 239.76 mA/mm and the breakdown voltage is 70.40 V. The breakdown voltages increase to 90.2 V as the gate-to-drain spacing increases to 1 µm. Based on these simulation results, new 4H-SiC MESFET designs can be calibrated.
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| Keywords:
85.30.Tv
85.30.De
85.30.z
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Received: 28 March 2011
Published: 29 June 2011
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| PACS: |
85.30.Tv
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(Field effect devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.z
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[1] Karen E M, Charles E W, Kevin J N, Lauren L P, John W P, Scott A and Calvin H C J 1997 IEEE Electron. Device Lett. 18 69
[2] Ahmed S and Georg B 2005 IEEE Trans. Microwave Theor. Tech. 53 2441
[3] Temcamani F, Pouvil P, Noblanc O, Brylinski C, Bannelier P, Darges B and Prigent J P 2001 IEEE MTT-S Int. Microwave Symposium Digest 2 641
[4] Allen S T, Pribble W L, Sadler R A, Alcorn T S, Ring Z and Palmou J W 1999 IEEE MTT-S Int. Microwave Symposium Digest 1 321
[5] Agarwal A, Fatima H, Haney S and Ryu S H 2007 IEEE Trans. Electron. Devices 28 587
[6] Sriram S, Suvorov A V, Henning J H, Namishia D J, Hagleitner H, Fisher J K, Smith T J, Alcorn T S and Pulz W T 2011 IEEE Trans. Electron. Devices 32 234
[7] Zhang Q, Callanan R, Das M K, Ryu S H, Agarwal A K and Palmour J W 2010 IEEE Trans. Power Electron. 25 2889
[8] Carter C H J, Tsvetkov V F, Glass R C, Henshall D, Brady M, Muller S G, Kordina O, Irvine K, Edmond J A, Kong H S, Singh R, Allen S T and Palmour J W 1999 Mater. Sci. Eng. B 61-62 1
[9] Palmour J W, Sheppard S T, Smith R P, Allen S T, Pribble W L, Smith T J, Ring Z, Sumakeris J J, Saxler A W and Milligan J W 2001 Int. Electron Dev. Meeting 1 17.4.1
[10] Andersson K, Sudow M, Nilsson P A, Sveinbjornsson E, Hjelmgren H, Nilsson J, Stahl J, Zirath H and Rorsman N 2006 IEEE Electron. Device Lett. 27 573
[11] Noblanc O, Arnodo C, Dua C, Chartier E and Brylinski C 1999 Mater. Sci. Eng. B 61-62 339
[12] Cha H Y, Thomas C I, Choi Y C, Eastman L F and Spencer M G 2003 IEEE Electron Device Lett. 24 571
[13] Raghunathan R and Baliga B J 1999 Solid-State Electron. 43 199
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