Chin. Phys. Lett.  2011, Vol. 28 Issue (7): 078502    DOI: 10.1088/0256-307X/28/7/078502
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Numerical Simulation of 4H-SiC Metal Semiconductor Field Transistors
Kuang-Po HSUEH1**, Shih-Tzung SU2, Jun ZENG2
1Department of Electronics Engineering, Vanung University, Chung-Li 32061, Taiwan
2R&D Department, InPowerSemiconductor Corp., Ltd, Hong Kong
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Kuang-Po HSUEH, Shih-Tzung SU, Jun ZENG 2011 Chin. Phys. Lett. 28 078502
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Abstract This work simulates the performance of 4H-SiC MESFETs and establishes the optimum device structure for dc and rf applications that operate at high voltages. Devices with various channel doping, buffer layer doping, recess thickness, gate-to-drain spacing and temperatures of operation are considered. The simulation results reveal that a p-type buffer layer of 5×1015 cm−3 and a channel layer of 1×1017 cm−3 yield favorable results. The cut-off frequency is 22.53 GHz, the maximum transconductance is 50.55 mS/mm, the drain saturation current is 239.76 mA/mm and the breakdown voltage is 70.40 V. The breakdown voltages increase to 90.2 V as the gate-to-drain spacing increases to 1 µm. Based on these simulation results, new 4H-SiC MESFET designs can be calibrated.
Keywords: 85.30.Tv      85.30.De      85.30.z     
Received: 28 March 2011      Published: 29 June 2011
PACS:  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.z  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/28/7/078502       OR      https://cpl.iphy.ac.cn/Y2011/V28/I7/078502
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Kuang-Po HSUEH
Shih-Tzung SU
Jun ZENG
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