| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Bias Effects on the Growth of Helium-Containing Titanium Films |
| ZHANG Li-Ran1, DENG Ai-Hong1,2**, YANG Dong-Xu1, ZHOU Yu-Lu2, HOU Qing2, SHI Li-Qun3, ZHONG Yu-Rong4, WANG Bao-Yi4
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1 Department of Physics, Sichuan University, Chengdu 610064
2 Key Laboratory of Radiation Physics and Technology of the Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064
3 Institue of Modern Physics, Fudan University, Shanghai 200433
4 Laboratory of Nuclear Analysis Technique, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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ZHANG Li-Ran, DENG Ai-Hong, YANG Dong-Xu et al 2011 Chin. Phys. Lett. 28 077802 |
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Abstract Helium-containing titanium films were prepared on Si substrates with various biases applied by magnetron sputtering under stable He/Ar ambiance. Rutherford backscattering and elastic recoil detection analyses are used to measure the thickness of the He-Ti films and the helium depth profile, respectively. Experiments of x-ray diffraction and variable energy positron annihilation spectroscopy are carried out to investigate the microstructures of titanium films and the corresponding helium-related defects developed. The behavior of the implanted He, the microstructure of the He-Ti film and the formation of He-related defects all are affected by the substrate biases applied.
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| Keywords:
78.70.Bj
68.55.Ln
07.85.Jy
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Received: 01 December 2010
Published: 29 June 2011
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| PACS: |
78.70.Bj
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(Positron annihilation)
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68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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07.85.Jy
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(Diffractometers)
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