Chin. Phys. Lett.  2011, Vol. 28 Issue (7): 077802    DOI: 10.1088/0256-307X/28/7/077802
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Bias Effects on the Growth of Helium-Containing Titanium Films
ZHANG Li-Ran1, DENG Ai-Hong1,2**, YANG Dong-Xu1, ZHOU Yu-Lu2, HOU Qing2, SHI Li-Qun3, ZHONG Yu-Rong4, WANG Bao-Yi4
1 Department of Physics, Sichuan University, Chengdu 610064
2 Key Laboratory of Radiation Physics and Technology of the Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064
3 Institue of Modern Physics, Fudan University, Shanghai 200433
4 Laboratory of Nuclear Analysis Technique, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049
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ZHANG Li-Ran, DENG Ai-Hong, YANG Dong-Xu et al  2011 Chin. Phys. Lett. 28 077802
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Abstract Helium-containing titanium films were prepared on Si substrates with various biases applied by magnetron sputtering under stable He/Ar ambiance. Rutherford backscattering and elastic recoil detection analyses are used to measure the thickness of the He-Ti films and the helium depth profile, respectively. Experiments of x-ray diffraction and variable energy positron annihilation spectroscopy are carried out to investigate the microstructures of titanium films and the corresponding helium-related defects developed. The behavior of the implanted He, the microstructure of the He-Ti film and the formation of He-related defects all are affected by the substrate biases applied.
Keywords: 78.70.Bj      68.55.Ln      07.85.Jy     
Received: 01 December 2010      Published: 29 June 2011
PACS:  78.70.Bj (Positron annihilation)  
  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  07.85.Jy (Diffractometers)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/28/7/077802       OR      https://cpl.iphy.ac.cn/Y2011/V28/I7/077802
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ZHANG Li-Ran
DENG Ai-Hong
YANG Dong-Xu
ZHOU Yu-Lu
HOU Qing
SHI Li-Qun
ZHONG Yu-Rong
WANG Bao-Yi
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