| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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AlGaN/GaN Ultraviolet Detector with Dual Band Response |
| GAO Bo**, LIU Hong-Xia, WANG Shu-Long
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School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071
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| Cite this article: |
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GAO Bo, LIU Hong-Xia, WANG Shu-Long 2011 Chin. Phys. Lett. 28 057802 |
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Abstract The AlGaN/GaN ultraviolet detector with dual band response is investigated by a self-consistent solution of the Poisson–Schrödinger equation. Because of the polarization effect, the AlGaN/GaN UV detector with dual band response can be realized by varying the external voltage. At a low external voltage, the detector is mainly sensitive to the short wavelength. When the increasing external voltage is larger than the critical voltage, the detector has an obvious dual band response characteristic and the critical voltage is calculated. This characteristic makes nitride-based UV detector a larger potential application to develop multi band response by adjusting the Aluminum mole fraction in the AlGaN layer or even by using the AlGaN/GaN/InGaN heterostructure.
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| Keywords:
78.66.Fd
85.60.Bt
85.60.Gz
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Received: 15 November 2010
Published: 26 April 2011
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| PACS: |
78.66.Fd
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(III-V semiconductors)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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