| Original Articles |
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Dependence of Crystal Quality and β Value on Synthesis Temperature in Growing Gem Diamond Crystals |
| XIAO Hong-Yu1;JIA Xiao-Peng1,2;ZANG Chuan-Yi2;LI Shang-Sheng1;TIAN Yu1;ZHANG Ya-Fei1;HUANG Guo-Feng1;MA Li-Qiu1;MA Hong-An1 |
| 1National Lab of Superhard Materials, Jilin University, Changchun 1300122Institute of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000 |
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| Cite this article: |
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XIAO Hong-Yu, JIA Xiao-Peng, ZANG Chuan-Yi et al 2008 Chin. Phys. Lett. 25 1469-1471 |
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Abstract High quality Ib gem diamond single crystals were synthesized in cubic anvil high-pressure apparatus (SPD-6×1200) under 5.4GPa and 1230°C--1280°C. The (100) face of seed crystal was used as growth face, and Ni70Mn25Co5 alloy was used as solvent/catalyst. The dependence of crystal quality and β value (the ratio of height to diameter of diamond crystal) on synthesis temperature was studied. When the synthesis temperature is between 1230°C and 1280°C, the β value of the synthetic high-quality gem diamond crystals is between 0.4 and 0.6. The results show that when the β value is between 0.4 and 0.45, the synthetic diamonds are sheet-shape crystals; however, when the β value is between 0.45 and 0.6, the synthetic diamonds are tower-shape crystals. In addition, when the β value is less than 0.4, skeleton crystals will appear. When the β value is more than 0.6, most of the synthetic diamond crystals are inferior crystals.
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| Keywords:
81.05.Uw
81.10.Aj
61.72.Qq
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Received: 24 September 2007
Published: 31 March 2008
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| PACS: |
81.05.Uw
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81.10.Aj
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(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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61.72.Qq
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(Microscopic defects (voids, inclusions, etc.))
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[1] Yoder M N 1991 Diamond and Diamond-Like Films and Coatings edClausing R E, Horton L L, Angus J C and Koidl P (New York: Plenum) p 1
[2] Jayaraman A 1983 Rev. Mod. Phys. 55 65
[3] Toda N, Sumiya H, Satoh S and Ishikawa T 1997 Proc. SPIE 3151 329
[4] Yamamoto M, Kumasaka T and Ishikawa T 2000 Rev. High Press.Sci. Technol. 10 56
[5] Sumiya H, Toda N and Satoh S 1999 Rev. High Press. Sci.Technol. 9 255
[6] Isoya J, Kanda H, Akaishi M, Morita Y and Ohsima T 1997 Diamond Rel. Mater. 6 356
[7] Chen Y C, Yan C S, Mao H K and Hemley R J 2004 First AnnualSSAAP Symposium (Albuquerque, NM, March 29--31 2004)
[8] Yan C S, Chen Y C, Ho S S, Mao H K and Hemley R J 2005 The10th International Conference on New Diamond Science and Technology(Tsukuba, Japan, May 11--14 2005)
[9] Yan C S, Chen Y C, Ho S S, Mao H K and Hemley R J 2005 8thApplied Diamond Conference, Nanocarbon (Argonne National Laboratory,Argonne, Illinois, May 15--19 2005)
[10] Sumiya H, Toda N and Satoh S 2002 J. Cryst. Growth 237-239 1281 |
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