Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor

Chin. Phys. Lett.

2008, Vol. 25

Issue (5): 1848-1849 DOI:

Original Articles

Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor

XU Cheng^1,2;LIU Bo¹;CHEN Yi-Feng²;LIANG Shuang²;SONG Zhi-Tang¹; FENG Song-Lin¹;WAN Xu-Dong³;YANG Zuo-Ya³;XIE Joseph³;CHEN Bomy⁴

¹Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 ²Graduate School of the Chinese Academy of Sciences, Beijing 100049³Semiconductor Manufacturing International Corporation, Shanghai 201203⁴Silicon Storage Technology Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA

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XU Cheng, LIU Bo, CHEN Yi-Feng et al 2008 Chin. Phys. Lett. 25 1848-1849

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Abstract A Ge₂Sb₂Te₅ based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor (MOSFET) is fabricated using standard 0.18μm complementary metal-oxide semiconductor process
technology. It shows steady switching characteristics in the dc current-voltage measurement. The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0V and pulse width of 50ns is also obtained. These results show the feasibility of integrating phase change memory cell with MOSFET.

Keywords: 73.61.Jc 61.72.Uj 87.15.Zg 85.30.Tv

Received: 30 January 2008 Published: 29 April 2008

PACS:	73.61.Jc	(Amorphous semiconductors; glasses)
	61.72.uj	(III-V and II-VI semiconductors)
	87.15.Zg	(Phase transitions)
	85.30.Tv	(Field effect devices)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2008/V25/I5/01848

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Articles by authors
	XU Cheng
	LIU Bo
	CHEN Yi-Feng
	LIANG Shuang
	SONG Zhi-Tang
	FENG Song-Lin
	WAN Xu-Dong
	YANG Zuo-Ya
	XIE Joseph
	CHEN Bomy

[1] Gill M et al 2002 ISSCC Dig. Tech. paper 202
[2] Hwang Y N et al 2003 Symp. VLSI Circuits Digest 173
[3] Adler D et al 1980 J. Appl. Phys. {\bf 51 3289
[4] Reifenberg J P et al 2007 J. Appl. Phys. {\bf 91111904
[5] Liu B et al., 2004 Semicond. Sci. Technol. {\bf 19L61
[6] Wang K et al 2004 J. Appl. Phys. {\bf 96 5557
[7] Zhang T et al 2004 Chin. Phys. Lett. {\bf 21 741
[8] Xu C et al 2005 Chin. Phys. Lett. {\bf 22 2929
[9] Zhang T et al 2005 Chin. Phys. Lett. {\bf 22 1803
[10] Lai S and Lowrey T 2001 Tech. Dig. Int. ElectronDevices Meet. 36.5.1
[11] Lai S 2003 Int. Electron Devices Meet. 10.1.1

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