| Original Articles |
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Influence of Strain-Reducing Layer on Strain Distribution of Self-Organized InAs/GaAs Quantum Dot and Redshift of Photoluminescence Wavelength |
| LIU Yu-Min1,2;YU Zhong-Yuan1,2;REN Xiao-Min2 |
| 1School of Science, Beijing University of Posts and Telecommunication, Beijing 1008762Key Laboratory of Optical Communication and Lightwave Technologies of Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876 |
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| Cite this article: |
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LIU Yu-Min, YU Zhong-Yuan, REN Xiao-Min 2008 Chin. Phys. Lett. 25 1850-1853 |
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Abstract A systematic investigation about the strain distributions around the InAs/GaAs quantum dots using the finite element method is presented. A special attention is paid to influence of an In0.2Ga0.8As strain reducing layer. The numerical results show that the horizontal- and vertical-strain components and the biaxial strain are reinforced in the InAs quantum
dot due to the strain-reducing layer. However, the hydrostatic strain in the quantum dot is reduced. In the framework of eight-band k∙p theory, we study the band edge modifications due to the presence of a strain reducing layer. The results demonstrate that the strain reducing layer yields the decreasing band gap, i.e., the redshift phenomenon is observed in experiments. Our calculated results show that degree of the redshift will increase with the
increasing thickness of the strain-reducing layer. The calculated results can explain the experimental results in the literature, and further confirm that the long wavelength emission used for optical fibre communication is realizable by adjusting the dependent parameters. However, based on the calculated electronic and heavy-hole wave function distributions, we find that the intensity of photoluminescence will exhibits some variations with the
increasing thickness of the strain-reducing layer.
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| Keywords:
73.63.-b
73.63.Kv
72.25.Dc
85.35.Gv
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Received: 22 August 2007
Published: 29 April 2008
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| PACS: |
73.63.-b
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(Electronic transport in nanoscale materials and structures)
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73.63.Kv
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(Quantum dots)
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72.25.Dc
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(Spin polarized transport in semiconductors)
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85.35.Gv
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(Single electron devices)
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