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Temperature-Dependent Transport Properties in Oxide p-n Junction above Room Temperature |
LIU Guo-Zhen;JIN Kui-Juan;HE Meng;QIU Jie;XING Jie;LU Hui-Bin;YANG
Guo-Zhen |
| Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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LIU Guo-Zhen, JIN Kui-Juan, HE Meng et al 2008 Chin. Phys. Lett. 25 2209-2210 |
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Abstract Oxide p-n junctions of
p-SrIn0.1Ti0.9O3/n-SrNb0.01Ti0.99O3 (SITO/SNTO) are fabricated by laser molecular beam epitaxy. The current-voltage characteristics of the SITO/SNTO p-n junction are investigated mainly in the temperature range of 300--400K. The SITO/SNTO junction exhibited good rectifying behaviour over the whole
temperature range. Our results indicate a possibility of application of oxide p-n junction in higher temperatures in future electronic devices.
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| Keywords:
73.40.Lq
77.84.Dy
73.40.-c
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Received: 04 February 2008
Published: 31 May 2008
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| PACS: |
73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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77.84.Dy
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73.40.-c
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(Electronic transport in interface structures)
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