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Transport Behaviour of La0.8Sr0.2AlO3 Thin Film on Oxygen Deficient SrTiO3 Substrate |
| QIU Jie;LU Hui-Bin;JIN Kui-Juan;LIU Guo-Zhen;YANG Guo-Zhen |
| Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
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QIU Jie, LU Hui-Bin, JIN Kui-Juan et al 2008 Chin. Phys. Lett. 25 2206-2208 |
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Abstract La0.8Sr0.2AlO3 (LSAO) thin films are grown on SrTiO3 (STO) and MgO substrates by laser molecular beam epitaxy. The LSAO thin film on oxygen deficient STO substrate exhibits metallic behaviour over the temperature range of 80--340K. The optical transmittance spectrum indicates that the
LSAO thin films on MgO substrate are insulating at room temperature. The transport properties of LSAO thin films on STO substrates deposited in different oxygen pressure are compared. Our results indicate that oxygen vacancies in STO substrates should be mainly responsible for the transport behaviour of LSAO thin films.
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| Keywords:
73.40.Lq
73.50.-h
77.55.+f
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Received: 15 March 2008
Published: 31 May 2008
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| PACS: |
73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.50.-h
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(Electronic transport phenomena in thin films)
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77.55.+f
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