Damage Removal and Strain Relaxation in As+-Implanted Si0.57Ge0.43 Epilayers Grown by Gas Source Molecular Beam Epitaxy

Chin. Phys. Lett.

1997, Vol. 14

Issue (3): 209-212 DOI:

Original Articles

Damage Removal and Strain Relaxation in As⁺-Implanted Si_0.57Ge_0.43 Epilayers Grown by Gas Source Molecular Beam Epitaxy

ZOU Lü-fan;WANG Zhan-guo;SUN Dian-zhao;FAN Ti-wen;LIU Xue-feng;ZHANG Jing-wei

Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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ZOU Lü-fan, WANG Zhan-guo, SUN Dian-zhao et al 1997 Chin. Phys. Lett. 14 209-212

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Abstract The damage removal and strain relaxation in the As⁺-implanted Si_0.57Ge_0.43 epilayers were studied by double-crystal x-ray diffractornetry and transmission electron microscopy. The results presented in this paper indicate that rapid thermal annealing at temperatures higher than 950°C results in complete removal of irradiation damage accompained by the formation of GeAs precipitates which enhance the removal process of dislocations.

Keywords: 68.55.Bd 68.55.Ln 68.55.Jk

Published: 01 March 1997

PACS:	68.55.Bd
	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)
	68.55.Jk

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I3/0209

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	ZOU Lü-fan
	WANG Zhan-guo
	SUN Dian-zhao
	FAN Ti-wen
	LIU Xue-feng
	ZHANG Jing-wei

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