Chin. Phys. Lett.  2005, Vol. 22 Issue (3): 678-681    DOI:
Original Articles |
Properties of Excitons Bound to Neutral Donors in GaAs Quantum-Well Wires
LIU Jian-Jun;WANG Xue-Feng
College of Physics, Hebei Normal University, Shijiazhuang 050016
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LIU Jian-Jun, WANG Xue-Feng 2005 Chin. Phys. Lett. 22 678-681
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Abstract In the effective mass approximation, the binding energy of an exciton bound to a neutral donor (D0, X) is calculated variationally for rectangular GaAs quantum-well wires (QWWs) by using a three-parameter wavefunction. The Coulomb interaction terms are treated exactly in their full three-dimensional forms throughout the calculation, especially in the case of (D0, X), which is a more physically realistic procedure than those employed in previous calculations which used effective one-dimensional potential [Chin. Phys. Lett. 21 (2004) 919]. Our treatment is unique in the use of a two-dimensional Fourier expansion of the Coulomb potential, which removes the numerical difficulty with the 1/r singularity and considerably reduces the computational effort. In addition, we also calculate the binding energies of (D0, X) when the donor is in different positions (at the centre, boundary and corner). The average interparticle distances in the square QWWs are discussed.
Keywords: 73.21.Hb      71.35.-y      71.55.Eq     
Published: 01 March 2005
PACS:  73.21.Hb (Quantum wires)  
  71.35.-y (Excitons and related phenomena)  
  71.55.Eq (III-V semiconductors)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I3/0678
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WANG Xue-Feng
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