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Chemical Structure of HfO2/Si Interface with Angle-Resolved Synchrotron Radiation Photoemission Spectroscopy |
| TAN Ting-Ting1, LIU Zheng-Tang1, LIU Wen-Ting1, ZHANG Wen-Hua2 |
| 1School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 7100722National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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TAN Ting-Ting, LIU Zheng-Tang, LIU Wen-Ting et al 2008 Chin. Phys. Lett. 25 3750-3752 |
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Abstract Interfacial chemical structure of HfO2/Si (100) is investigated using angle-resolved synchrotron radiation photoemission spectroscopy (ARPES). The chemical states of Hf show that the Hf 4f binding energy changes with the probing depth and confirms the existence of Hf--Si--O and Hf--Si bonds. The Si 2p spectra are taken to make sure that the interfacial structure includes the Hf silicates, Hf silicides and SiOx. The metallic characteristic of the Hf--Si bonds is confirmed by the valence band spectra. The depth distribution model of this interface is established.
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73.20.At
77.55.+f
82.65.Tr
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Received: 04 May 2008
Published: 26 September 2008
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