| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Thermoelastic Stress Field Investigation of GaN Material for Laser Lift-off Technique based on Finite Element Method |
| WANG Ting, CUI Zhan-Zhong, XU Li-Xin |
| School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081 |
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| Cite this article: |
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WANG Ting, CUI Zhan-Zhong, XU Li-Xin 2009 Chin. Phys. Lett. 26 094601 |
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Abstract The transient thermoelastic stress fields of GaN films is analyzed by the finite element method for the laser lift-off (LLO) technique. Stress distributions in GaN films irradiated by pulse laser with different energy densities as functions of time and depth are simulated. The results show that the high thermoelastic stress distributions in GaN films localize within about 1μm below the GaN/Al2O3 interface using proper laser parameters. It is also found that GaN films can avoid the thermal deformation because the maximum thermoelastic stress 4.28GPa is much smaller than the yield strength of GaN 15GPa. The effects of laser beam dimension and the thickness of GaN films on stress distribution are also analyzed. The variation range of laser beam dimension as a function of the thickness of GaN films is simulated to keep the GaN films free of thermal deformation. LLO experiments are also carried out. GaN-based light-emitting diodes (LEDs) are separated from sapphire substrates using the parameters obtained from the simulation. Compared with devices before LLO, P-I-V measurements of GaN-based LEDs after LLO show that the electrical and optical characteristics improve greatly, indicating that no stress damage is brought to GaN films using proper parameters obtained by calculation during LLO.
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| Keywords:
46.25.Hf
62.20.D-
85.80.Fi
78.20.-e
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Received: 30 March 2009
Published: 28 August 2009
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| PACS: |
46.25.Hf
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(Thermoelasticity and electromagnetic elasticity (electroelasticity, magnetoelasticity))
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62.20.D-
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(Elasticity)
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85.80.Fi
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(Thermoelectric devices)
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78.20.-e
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(Optical properties of bulk materials and thin films)
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